m28f201-150xn6tr STMicroelectronics, m28f201-150xn6tr Datasheet - Page 2

• Manufacturer Part Number: m28f201-150xn6tr
• Description: 256k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

M28F201
Figure 2A. LCC Pin Connections
Figure 2C. TSOP Reverse Pin Connections
2/21
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
V SS
A10
DQ0
A0
A1
A2
A3
A7
A6
A5
A4
A3
A2
A1
A0
G
E
9
1
8
9
16
(Reverse)
M28F201
M28F201
17
1
32
AI00640D
32
25
24
17
25
AI00638C
A14
A13
A8
A9
A11
G
A10
E
DQ7
A11
A9
A8
A13
A14
A17
W
V CC
V PP
A16
A15
A12
A7
A6
A5
A4
Figure 2B. TSOP Pin Connections
DEVICE OPERATION
The M28F201 FLASH Memory product employs a
technology similar to a 2 Megabit EPROM but add
to the device functionality by providing electrical
erasure and programming. These functions are
managed by a command register. The functions
that are addressed via the command register de-
pend on the voltage applied to the V
voltage, input. When V
6.5V, the command register is disabled and the
M28F201 functions as a read only memory provid-
ing operating modes similar to an EPROM (Read,
Output Disable, Electronic Signature Read and
Standby). When V
register is enabled and this provides, in addition,
Erase and Program operations.
READ ONLY MODES, V
For all Read Only Modes, except Standby Mode,
the Write Enable input W should be High. In the
Standby Mode this input is ’don’t care’.
Read Mode. The M28F201 has two enable inputs,
E and G, both of which must be Low in order to
output data from the memory. The Chip Enable (E)
is the power control and should be used for device
selection. Output Enable (G) is the output control
and should be used to gate data on to the output,
independantof the device selection.
V CC
V PP
A11
A13
A14
A17
A16
A15
A12
A9
A8
A7
A6
A5
A4
W
1
8
9
16
PP
M28F201
(Normal)
is raised to 12V the command
PP
PP
is less than or equal to
6.5V
AI00639C
32
25
24
17
PP
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
V SS
DQ2
DQ1
DQ0
A0
A1
A2
A3
, program