m28f201-150xn6tr STMicroelectronics, m28f201-150xn6tr Datasheet - Page 6

• Manufacturer Part Number: m28f201-150xn6tr
• Description: 256k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

M28F201
Table 8. DC Characteristics
(T
Note: 1. Not 100% tested. Characterisation Data available.
6/21
Symbol
A
I
I
I
I
I
I
I
I
CC2
CC3
CC4
CC5
V
I
V
PP1
PP2
PP3
PP4
V
I
V
= 0 to 70 C, –40 to 85 C or –40 to 125 C; V
I
V
ID
V
V
I
I
CC1
I
V
LPP
I
CC
PPH
LKO
LO
PP
PPL
LI
OH
OL
IH
ID
IL
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Programming)
Supply Current (Program Verify)
Supply Current (Erase)
Supply Current (Erase Verify)
Program Leakage Current
Program Current (Read or
Standby)
Program Current (Programming)
Program Current (Program
Verify)
Program Current (Erase)
Program Current (Erase Verify)
Input Low Voltage
Input High Voltage TTL
Input High Voltage CMOS
Output Low Voltage
Output High Voltage CMOS
Output High Voltage TTL
Program Voltage (Read
Operations)
Program Voltage (Read/Write
Operations)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Voltage, Erase/Program
Lock-out
Parameter
V
V
PP
PP
V
V
= V
= V
PP
PP
During Programming
CC
During Erase Verify)
E = V
PPH
= V
0V
= V
PPH
Test Condition
E = V
During Erasure
0V
I
I
I
= 5V
During Verify
I
OH
OH
OH
, During Programming
OL
V
V
V
PPH
PPH
, During Erase Verify
A9 = V
IL
PP
E = V
PP
PP
V
= –100 A
= –2.5mA
= –2.5mA
= 5.8mA
, f = 10MHz
V
CC
, During Erase
OUT
, During Verify
IN
> V
V
V
10%)
IH
CC
CC
ID
0.2V
CC
V
V
CC
CC
V
0.85 V
0.7 V
CC
–0.5
11.4
11.5
Min
2.4
2.5
2
0
– 0.4
CC
CC
V
V
CC
CC
Max
0.45
12.6
100
200
200
0.8
6.5
30
10
20
20
20
30
30
13
10
1
10
10
5
5
+ 0.5
+ 0.5
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
A