m28f201-150xn6tr STMicroelectronics, m28f201-150xn6tr Datasheet - Page 5

• Manufacturer Part Number: m28f201-150xn6tr
• Description: 256k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 6. AC Measurement Conditions
Figure 3. AC Testing Input Output Waveform
Table 7. Capacitance
Note: 1. Sampled only, not 100% tested.
Read Mode. The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
output data from the memory. The memory remains
in the Read Mode until a new command is written
to the command register.
Electronic Signature Mode. In order to select the
correct erase and programming algorithms for on-
board programming, the manufacturer and device
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
SRAM Interface
EPROM Interface
Symbol
0.45V
2.4V
C
C
3V
0V
OUT
IN
Input Capacitance
Output Capacitance
Parameter
(1)
(T
A
= 25 C, f = 1 MHz )
1.5V
2.0V
0.8V
AI01275
SRAM Interface Levels
Test Condition
V
V
OUT
0 to 3V
IN
1.5V
10ns
= 0V
Figure 4. AC Testing Load Circuit
= 0V
codes may be read directly. It is not neccessary to
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 80h or 90h to the command
register. The following read cycles, with address
inputs 00000h or 00001h, output the manufacturer
or device codes. The command is terminated by
writing another valid command to the command
register (for example Reset).
C L = 30pF for SRAM Interface
C L = 100pF for EPROM Interface
C L includes JIG capacitance
DEVICE
UNDER
TEST
Min
1.3V
EPROM Interface Levels
1N914
3.3k
0.45V to 2.4V
0.8V and 2V
C L = 30pF or 100pF
Max
12
6
10ns
OUT
M28F201
AI01276
Unit
pF
pF
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