stl100n6lf6 STMicroelectronics, stl100n6lf6 Datasheet - Page 4

• Manufacturer Part Number: stl100n6lf6
• Description: N-channel 60 V, 0.0038 , 22 A, Powerflattm 5x6 Stripfettm Vi Deepgatetm Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/10
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
V
Symbol
Symbol
Symbol
R
J
V
(BR)DSS
t
t
C
I
I
C
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
= 25 °C unless otherwise specified)
DSS
GSS
Q
R
t
oss
t
rss
iss
gs
gd
r
f
g
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 010015 Rev 1
I
V
V
V
V
V
V
V
V
V
V
(see
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
D
DS
DS
GS
DS
GS
GS
DS
GS
DD
GS
V
R
(see
= 1 mA, V
DD
G
= V
= 10 V, I
= 4.5 V, I
= 60 V,
= 60 V, @125 °C
= ±20 V
=25 V, f = 1 MHz,
= 0
=10 V
= 30 V, I
Test conditions
=4.7 Ω, V
Figure
Test conditions
= 30 V, I
Test conditions
Figure
GS
, I
D
3)
D
GS
D
D
= 11 A
= 250 µA
2)
= 11 A
D
GS
= 22 A
= 0
= 11 A,
=10 V
Min.
Min.
Min.
60
1
-
-
-
-
0.0038 0.0045
0.006 0.0072
Typ.
8900
Typ.
TBD
TBD
TBD
650
360
130
Typ.
TBD
TBD
TBD
TBD
STL100N6LF6
Max.
Max.
±100
Max.
2.5
10
1
-
-
-
-
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
Ω
V
V