stl100n6lf6 STMicroelectronics, stl100n6lf6 Datasheet - Page 5

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stl100n6lf6

Manufacturer Part Number
stl100n6lf6
Description
N-channel 60 V, 0.0038 , 22 A, Powerflattm 5x6 Stripfettm Vi Deepgatetm Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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STL100N6LF6
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 010015 Rev 1
I
I
di/dt = 100 A/µs,
V
(see
SD
SD
DD
= 22 A, V
= 22 A,
= 30 V, T
Test conditions
Figure
4)
GS
J
= 150 °C
= 0
Min.
Electrical characteristics
-
-
-
-
Typ.
TBD
TBD
TBD
Max
1.3
22
84
Unit
nC
ns
A
A
V
A
5/10

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