50MT060ULSAPBF VISHAY [Vishay Siliconix], 50MT060ULSAPBF Datasheet

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50MT060ULSAPBF

Manufacturer Part Number
50MT060ULSAPBF
Description
'Low Side Chopper' IGBT MTP (Ultrafast Speed IGBT), 100 A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Revision: 17-Jun-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
V
I
V
C
CE(on)
CES
DC
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
MTP
Diode
IGBT
SYMBOL
For technical questions, contact:
V
V
1.68 V
V
600 V
100 A
I
I
I
P
ISOL
CES
CM
FM
I
LM
I
GE
C
F
D
T
T
T
Any terminal to case, t = 1 minute
T
T
T
T
C
C
C
C
C
C
C
= 25 °C
= 122 °C
= 100 °C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
TEST CONDITIONS
1
indmodules@vishay.com
FEATURES
• Generation 4 ultrafast speed IGBT technology
• HEXFRED
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Al
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
recovery
resonant mode
2
O
3
DBC
www.vishay.com/doc?91000
®
diode
50MT060ULSTAPbF
Vishay Semiconductors
with
MAX.
2500
± 20
600
100
200
200
200
445
175
205
50
48
83
ultrasoft
Document Number: 94540
reverse
UNITS
W
V
A
V

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50MT060ULSAPBF Summary of contents

Page 1

Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A MTP PRODUCT SUMMARY V CES CE(on) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Diode ...

Page 2

ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Diode reverse breakdown voltage Temperature coefficient of threshold voltage Forward transconductance Collector to emitter leaking current Diode forward voltage drop Gate to emitter ...

Page 3

THERMISTOR SPECIFICATIONS PARAMETER SYMBOL Resistance R Sensitivity index of the  thermistor material Notes ( are thermistor´s temperatures    (2) ------ - exp ----- - ----- - , ...

Page 4

T = 150° 25° Vge = 15V 380 μ s Pulse Width 1 0.6 1.0 1.4 1 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 1000 ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.01 0.01 0.02 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig Maximum Transient Thermal Impedance, Junction to Case (Diode) 14000 0V ...

Page 6

5.0 Ω 125 ° 480 Collector Current (A) Fig. 12 ...

Page 7

100A 50A 25A 480V 125° 25°C 0 100 200 300 400 500 ...

Page 8

ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Revision: 17-Jun-11 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED ...

Page 9

R2 R5 Note • Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 MTP Ø 5 Ø 1.1 31 ...

Page 10

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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