50MT060ULSAPBF VISHAY [Vishay Siliconix], 50MT060ULSAPBF Datasheet - Page 2

• Manufacturer Part Number: 50MT060ULSAPBF
• Description: 'Low Side Chopper' IGBT MTP (Ultrafast Speed IGBT), 100 A
• Manufacturer: VISHAY [Vishay Siliconix]

Revision: 17-Jun-11
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Diode reverse breakdown voltage
Temperature coefficient of threshold voltage
Forward transconductance
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode junction capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
For technical questions, contact:
V
J
SYMBOL
dI
SYMBOL
V
J
= 25 °C unless otherwise specified)
V
GE(th)
V
(rec)M
(BR)CES
C
I
C
C
CE(on)
V
I
V
Q
Q
GE(th)
E
E
E
E
= 25 °C unless otherwise specified)
Q
E
E
Q
g
CES
GES
C
t
I
oes
BR
FM
on
off
on
off
res
rr
ies
rr
fe
ge
gc
ts
ts
g
rr
t
/T
/dt
J
I
V
V
V
R
energy losses include tail and diode
reverse recovery
V
R
energy losses include tail and diode
reverse recovery
V
V
f = 1.0 MHz
V
V
dI/dt = 200 A/μs
R
V
V
V
V
I
I
V
V
V
V
I
I
V
C
R
F
F
C
GE
GE
GE
GE
CE
CE
GE
GE
GE
CC
GE
CC
CC
GE
CC
R
CC
g
g
g
= 100 A, V
= 100 A, V
= 200 μA
= 0.5 mA
= 100 A
= 5 , T
= 5 , T
= 600 V, f = 1.0 MHz
= 5 
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= 50 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 480 V
= 15 V
= 480 V, I
= 480 V, I
= 0 V
= 30 V
= 480 V, I
2
GE
TEST CONDITIONS
TEST CONDITIONS
, I
[e-mail]
J
J
C
C
CE
CE
C
GE
GE
C
C
C
= 25 °C,
= 125 °C,
= 250 μA
= 500 μA
C
C
C
= 100 A
= 50 A
= 100 A
= 100 A, T
= 600 V
= 600 V, T
= 0 V
= 0 V, T
= 50 A, V
= 50 A, V
= 50 A
J
www.vishay.com/doc?91000
= 150 °C
J
GE
GE
J
= 150 °C
= 150 °C
= 15 V,
= 15 V,
50MT060ULSTAPbF
Vishay Semiconductors
MIN.
MIN.
600
600
22
3
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Document Number: 94540
TYP.
TYP.
9800
1.69
1.96
1.88
1.64
1.56
- 13
370
163
602
121
118
320
236
0.7
1.7
2.4
1.1
2.5
3.6
6.5
29
64
99
-
-
-
-
-
-
14 700
MAX.
± 250
MAX.
2.31
2.55
2.24
1.82
1.74
0.25
555
245
903
182
177
150
735
1.2
2.6
3.8
1.7
3.8
5.5
9.8
96
6
6
-
-
-
-
-
UNITS
mV/°C
UNITS
A/μs
mA
mJ
nA
nC
pF
nC
ns
V
S
V
A