50MT060ULSAPBF VISHAY [Vishay Siliconix], 50MT060ULSAPBF Datasheet - Page 4

• Manufacturer Part Number: 50MT060ULSAPBF
• Description: 'Low Side Chopper' IGBT MTP (Ultrafast Speed IGBT), 100 A
• Manufacturer: VISHAY [Vishay Siliconix]

Revision: 17-Jun-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000.0
100.0
10.0
1.0
100
10
1
5.0
0.6
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
www.vishay.com
T J = 150°C
1E-005
0.0001
V
V GE , Gate-to-Emitter Voltage (V)
0.001
CE
0.01
0.1
, Collector-to-Emitter Voltage (V)
1.0
1
1E-006
T
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
5.5
= 150°C
D = 0.50
Vge = 15V
380 μ s Pulse Width
0.01
0.02
0.10
0.05
0.20
1.4
V CC = 50V
20µs PULSE WIDTH
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
SINGLE PULSE
( THERMAL RESPONSE )
T
T J = 25°C
J
= 25°C
6.0
1E-005
1.8
For technical questions, contact:
6.5
2.2
0.0001
t 1 , Rectangular Pulse Duration (sec)
0.001
4
[e-mail]
τ
J
?
Fig. 4 - Maximum Collector Current vs. Case Temperature
J
τ
1
Ci= τi/Ri
?
1
Ci
i?Ri
R
1
0.01
Fig. 5 - Typical Collector to Emitter Voltage vs.
R
1
1.75
1.25
120
100
1.5
www.vishay.com/doc?91000
80
60
40
20
τ
0
2
1
2
R
?
2
2
R
25
20
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
2
R
τ
3
3
R
?
3
3
40
Junction Temperature
T J , Junction Temperature (°C)
τ
50
C
?
T C Case Temperature (°C)
Ri (°C/W)
50MT060ULSTAPbF
Vishay Semiconductors
0.060
0.130
0.100
0.1
60
75
80
0.019621
0.051755
0.000968
τi (sec)
100
100
Document Number: 94540
I C = 100A
I C = 25A
I C = 50A
1
120
125
140
150
160