hy5du281622ftp Hynix Semiconductor, hy5du281622ftp Datasheet - Page 19

• Manufacturer Part Number: hy5du281622ftp
• Description: 128mb Ddr Sdram
• Manufacturer: Hynix Semiconductor

Rev. 1.0 /June 2008
Operating
Current
Operating
Current
Auto Refresh
Current
Self Refresh
Current
Operating
Current -
Four Bank
Operation
Random Read
Current
Parameter Symbol
I
I
I
DD4W
I
I
I
DD4R
DD7A
DD5
DD6
DD7
Burst=2; Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; t
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; t
twice per clock cycle
t
CKE =< 0.2V; External clock on; t
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
4banks active read with activate every 20ns, AP(Auto
Precharge) read every 20ns, BL=4, t
mA, 100% DQ, DM and DQS inputs changing twice per
clock cycle; 100% addresses changing once per clock
cycle
RC
=t
RFC
CK
CK
(min) - 14*t
=t
=t
CK
CK
(min); DQ, DM and DQS inputs changing
(min); I
Test Condition
CK
OUT
for DDR400 at 200Mhz
=0mA
CK
=t
RCD
CK
=3, I
(min)
OUT
=0
HY5DU281622FT(P) Series
250
210
170
180
310
30
4
2
Speed
5/ D43/ D4
200
200
200
200
300
300
3
- Continue
Unit
MHz
mA
mA
mA
mA
Note
19