PMEG6010ETR NXP [NXP Semiconductors], PMEG6010ETR Datasheet - Page 2

• Manufacturer Part Number: PMEG6010ETR
• Description: High-temperature 60 V, 1 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMEG6010ETR
Product data sheet
Symbol
Pin
Type number
Type number
Symbol
t
1
2
PMEG6010ETR
PMEG6010ETR
V
I
I
I
rr
F
F(AV)
FSM
R
Symbol Description
K
A
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
Parameter
reverse recovery time
reverse voltage
forward current
average forward current
non-repetitive peak forward
current
cathode
anode
[1]
[1]
Package
Name
SOD123W
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
The marking bar indicates the cathode.
[1]
Conditions
Description
All information provided in this document is subject to legal disclaimers.
I
T
plastic surface mounted package; 2 leads
R
j
= 25 °C
= 0.5 A; I
Conditions
T
T
δ = 0.5 ; f = 20 kHz; T
square wave
δ = 0.5 ; f = 20 kHz; T
square wave
t
p
j
sp
Simplified outline
= 8 ms; T
= 25 °C
F
10 October 2012
= 165 °C
= 0.5 A; I
1
SOD123W
j(init)
High-temperature 60 V, 1 A Schottky barrier rectifier
Marking code
EK
R(meas)
= 25 °C; square wave
= 0.1 A;
2
amb
sp
≤ 170 °C;
≤ 140 °C;
Graphic symbol
2
O
3
, standard footprint.
Min
-
[1]
PMEG6010ETR
1
Typ
Min
4.4
-
-
-
-
-
sym001
© NXP B.V. 2012. All rights reserved
2
Max
Version
Max
-
SOD123W
60
1.4
1
1
50
Unit
Unit
ns
V
A
A
A
A
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