Z0109MN/T3 NXP [NXP Semiconductors], Z0109MN/T3 Datasheet
Z0109MN/T3
Related parts for Z0109MN/T3
Z0109MN/T3 Summary of contents
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Z0109MN 4Q Triac Rev. 05 — 22 March 2011 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring direct interfacing to logic level ICs and ...
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NXP Semiconductors Table 1. Symbol Static characteristics Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal main terminal gate 4 T2 main terminal 2 3. Ordering information ...
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NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V repetitive peak off-state voltage DRM I RMS on-state current T(RMS) I non-repetitive peak on-state TSM current 2 2 ...
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NXP Semiconductors 2.0 conduction form P tot angle factor (W) (degrees 2.8 90 2.2 120 1.9 1.2 180 1.57 0.8 0.4 0.0 0 0.2 Fig 3. Total power dissipation as a function of RMS on-state ...
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NXP Semiconductors ( (1) ( Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values Z0109MN Product data sheet - All information ...
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NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-sp) junction to solder point R thermal resistance from th(j-a) junction to ambient 3.8 min 1.5 min 1.5 min (3×) 1.5 min 4.6 All dimensions ...
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NXP Semiconductors Fig 8. Transient thermal impedance from junction to solder point as a junction of pulse width Z0109MN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 22 March 2011 Z0109MN ...
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NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage GT I off-state current D Dynamic characteristics dV ...
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NXP Semiconductors GT(25°C) 3 (1) (2) ( (1) T2- G+ (2) T2- G- (3) T2+ G- (4) T2+ G+ Fig 9. Normalized gate trigger current as a function of ...
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NXP Semiconductors 1 GT(25°C) 1.2 0.8 0 Fig 13. Normalized gate trigger voltage as a function of junction temperature Z0109MN Product data sheet 003aaa209 1.6 A 1.2 0.8 0.4 0 100 150 T ...
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NXP Semiconductors 7. Package outline Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 ...
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NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date Z0109MN v.5 20110322 • Modifications: Various changes to content. Z0109MN v.4 20100906 Z0109MN Product data sheet Data sheet status Change notice Product data sheet - Product data ...
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NXP Semiconductors 9. Legal information 9.1 Data sheet status [1] [2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating ...
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NXP Semiconductors agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document ...
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NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . ...