blw81 NXP Semiconductors, blw81 Datasheet - Page 4

• Manufacturer Part Number: blw81
• Description: Uhf Power Transistor
• Manufacturer: NXP Semiconductors

CHARACTERISTICS
T
Note
1. Measured under pulse conditions: t
Philips Semiconductors
March 1993
Breakdown voltages
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector cut-off current
D.C. current gain
Collector-emitter saturation voltage
Transition frequency at f = 500 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-stud capacitance
j
= 25 C
UHF power transistor
V
open base; I
open collector; I
V
I
I
I
I
I
I
C
C
C
E
C
C
BE
BE
= 3,75 A; I
= 1,25 A; V
= 3,75 A; V
= I
= 100 mA; V
= 1,25 A; V
= 0; I
= 0; V
e
= 0; V
C
CE
= 25 mA
C
CB
B
= 17 V
CE
CE
CE
= 100 mA
= 0,75 A
CE
= 12,5 V
E
(1)
= 12,5 V
= 12,5 V
= 5 V
= 10 mA
= 12,5 V
(1)
p
(1)
200 s;
0,02.
4
V
V
V
I
h
V
f
f
C
C
C
CES
T
T
FE
(BR)CES
(BR)CEO
(BR)EBO
CEsat
c
re
cs
typ
typ
typ
typ
typ
typ
typ
Product specification
0,75 V
1,3 GHz
0,9 GHz
1,2 pF
36 V
17 V
10 mA
10
35
34 pF
18 pF
BLW81
4 V