2SJ508_07 TOSHIBA [Toshiba Semiconductor], 2SJ508_07 Datasheet

2SJ508_07

Manufacturer Part Number

2SJ508_07

Description

Chopper Regulator, DC−DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SJ508_07.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Marking

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 4)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: V

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Lot No.

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L

= −50 V, T

Pulse (Note 1)

= 20 kΩ)

: V

DSS

= 25°C (initial), L = 168 mH, R

(Note 1)

(Note 2)

(Note 3)

= −0.8~−2.0 V (V

= −100 μA(max) (V

(Ta = 25°C)

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

th (ch−a)

DS (ON)

2SJ508

| = 0.7 S (typ.)

= −10 V, I

= 1.34 Ω (typ.)

−55~150

= −100 V)

Rating

136.5

−100

0.05

±20

150

0.5

1.5

−1

−3

−1

Max

250

= 25 Ω, I

= −1 mA)

°C / W

Unit

°C

= −1 A

Weight: 0.05 g (typ.)

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2−5K1B

2007-01-16

―

2SJ508

Unit: mm

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2SJ508_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA(max) (V DSS Enhancement ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

I – −1.0 −10 −3.2 −8 −0.8 −6 −5 −0.6 −0.4 Common source Ta = 25°C −0.2 Pulse test −2.1V 0 −1 −2 −3 −4 0 Drain-source voltage V DS (V) I – V ...

Page 4

(ON) 3.0 Common source Pulse test 2 −0.5A 2 −4 V 1.5 −10V 1.0 0.5 0 −80 − 120 Ambient temperature Ta (°C) Capacitance – ...

Page 5

Single pulse 100 10m SAFE OPERATING AREA − max (pulsed max (continuous) − −0.1 DC operation Ta = 25°C −0.01 *: Single nonrepetitive pulse Tc = 25°C Curves ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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