2SJ680_06 TOSHIBA [Toshiba Semiconductor], 2SJ680_06 Datasheet
2SJ680_06
Related parts for 2SJ680_06
2SJ680_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • = −100 μA (max) (V Low leakage current: ...
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Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
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I – −2.0 −8 −6 −5 Common source Tc = 25°C −10 pulse test −1.6 −15 −1.2 −0 −4 V −0.4 0 −1 −2 −3 −4 0 (V) Drain-source voltage – ...
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R – (ON) 6 Common source − −1 pulse test −1 −80 − Case temperature Tc (°C) Capacitance – ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 0.001 10 μ 100 μ Safe operating area − max (pulse) * −10 −5 1 ms* −3 −1 −0.5 −0.3 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...