k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 35

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

COMMAND
K4J55323QI
Nonconsecutive WRITE to WRITE
ADDRESS
WDQS
/CK
DM
NOTE
CK
DQ
:
1. DI b, etc. = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. burst of 4 is shown.
5. Each WRITE command may be to any bank.
6. Write latency is set to 3
WRITE
Bank,
Col b
T0
t
DQSS
(NOM)
NOP
T1
NOP
T2
WRITE
35 / 54
Bank,
Col n
DI
T3
b
T3n
DON’T CARE
DON’T CARE
NOP
T4
T4n
256M GDDR3 SDRAM
NOP
TRANSITIONING DATA
T5
T5n
Rev. 1.3 May 2007
NOP
T6
DI
n
T6n
NOP
T7