r1rw0416di Renesas Electronics Corporation., r1rw0416di Datasheet
r1rw0416di
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r1rw0416di Summary of contents
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... It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. ...
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... R1RW0416DI Series Pin Arrangement 44-pin SOJ (Top View) Pin Description Pin name ...
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... R1RW0416DI Series Block Diagram (LSB) A14 A13 A12 A11 A10 A3 A1 (MSB) I/ I/O8 I/ I/O16 WE# CS# LB# UB# OE# CS Rev.1.00, Mar.12.2004, page Memory matrix Row 1024 rows 32 columns decoder 8 blocks 16 bit (4,194,304 bits) CS Column I/O Input Column decoder data control (LSB A17 A15 A16 ...
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... R1RW0416DI Series Operation Table CS# OE# WE# LB# UB# Mode H Standby Output disable Read Lower byte read Upper byte read Write Lower byte write Upper byte write I ...
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... R1RW0416DI Series Recommended DC Operating Conditions ( +85 C) Parameter Supply voltage Input voltage Notes (min) = 2.0 V for pulse width (under shoot (max 2.0 V for pulse width (over shoot The supply voltage with all V 4. The supply voltage with all V DC Characteristics ( + ...
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... R1RW0416DI Series AC Characteristics ( + 3.3 V 0.3 V, unless otherwise noted.) CC Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: See figures (Including scope and jig OUT Output load (A) Read Cycle ...
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... R1RW0416DI Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Byte select to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to output in low-Z ...
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... R1RW0416DI Series Timing Waveforms Read Timing Waveform (1) (WE Address CS# OE# LB#, UB# High impedance D OUT Rev.1.00, Mar.12.2004, page Valid address ACS BLZ OLZ CLZ CHZ OHZ BHZ Valid data ...
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... R1RW0416DI Series Read Timing Waveform (2) (WE Address CS# OE# High impedance D OUT Rev.1.00, Mar.12.2004, page LB UB Valid address ACS OLZ CLZ 4 * Valid data CHZ OHZ 4 * ...
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... R1RW0416DI Series Write Timing Waveform (1) (WE# Controlled) Address WE#* 3 CS#* OE# LB#, UB# D OUT D IN Rev.1.00, Mar.12.2004, page Valid address WHZ t OHZ High impedance Valid data OLZ ...
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... R1RW0416DI Series Write Timing Waveform (2) (CS# Controlled) Address WE CS# * OE# LB#, UB# D OUT D IN Rev.1.00, Mar.12.2004, page Valid address WHZ t OHZ High impedance Valid data OLZ ...
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... R1RW0416DI Series Write Timing Waveform (3) (LB#, UB# Controlled, OE Address 3 WE UB# (LB#) LB# (UB -LB - -UB OUT Rev.1.00, Mar.12.2004, page Valid address Valid data ...
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... Revision History Rev. Date Contents of Modification Page Description 0.01 Sep. 30, 2003 Initial issue 1.00 Mar.12.2004 Deletion of Preliminary R1RW0416DI Series Data Sheet ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...