r1rw0416di Renesas Electronics Corporation., r1rw0416di Datasheet - Page 5

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r1rw0416di

Manufacturer Part Number
r1rw0416di
Description
Wide Temperature Range Version 4m High Speed Sram 256-kword ?? 16-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
R1RW0416DI Series
Recommended DC Operating Conditions
(Ta = 40 to +85 C)
Parameter
Supply voltage
Input voltage
Notes: 1. V
DC Characteristics
(Ta = 40 to +85 C, V
Parameter
Input leakage current
Output leakage current
Operating power supply current
Standby power supply current
Output voltage
Capacitance
(Ta = +25 C, f = 1.0 MHz)
Parameter
Input capacitance*
Input/output capacitance*
Note:
Rev.1.00, Mar.12.2004, page 5 of 12
2. V
3. The supply voltage with all V
4. The supply voltage with all V
1. This parameter is sampled and not 100% tested.
IL
IH
(min) = 2.0 V for pulse width (under shoot)
(max) = V
1
CC
CC
= 3.3 V
1
+ 2.0 V for pulse width (over shoot)
Symbol
C
C
0.3 V, V
Symbol
V
V
V
V
IN
I/O
Symbol
|I
|I
I
I
I
V
V
CC
SB
SB1
CC
SS
IH
IL
LI
LO
OL
OH
|
*
*
|
CC
SS
4
3
pins must be on the same level.
pins must be on the same level.
SS
= 0 V)
Min
2.4
Min
Min
3.0
0
2.0
0.5*
Max
2
2
130
40
5
0.4
6 ns
1
Max
6
8
6 ns
Typ
3.3
0
Unit
V
mA
mA
mA
V
A
A
Unit
pF
pF
Test conditions
V
V
Min cycle
CS# = V
Other inputs = V
Min cycle, CS# = V
Other inputs = V
f = 0 MHz
V
(1) 0 V
(2) V
I
I
OL
OH
Max
3.6
0
V
0.8
IN
IN
CC
CC
= 8 mA
= 4 mA
= V
= V
+ 0.5*
CS#
CC
SS
SS
IL
to V
to V
, I
Test conditions
V
V
V
V
2
IN
I/O
OUT
IN
IN
V
= 0 V
CC
CC
= 0 V
CC
= 0 mA
Unit
V
V
V
V
V
0.2 V or
IH
IH
CC
/V
/V
0.2 V,
IH
IL
IL
,
0.2 V

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