r1rw0416di Renesas Electronics Corporation., r1rw0416di Datasheet - Page 7

• Manufacturer Part Number: r1rw0416di
• Description: Wide Temperature Range Version 4m High Speed Sram 256-kword ?? 16-bit
• Manufacturer: Renesas Electronics Corporation.

R1RW0416DI Series
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip select to end of write
Write pulse width
Byte select to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Write disable to output in low-Z
Output disable to output in high-Z
Write enable to output in high-Z
Notes: 1. Transition is measured 200 mV from steady voltage with output load (B). This parameter is
Rev.1.00, Mar.12.2004, page 7 of 12
2. If the CS# or LB# or UB# low transition occurs simultaneously with the WE# low transition or
3. WE# and/or CS# must be high during address transition time.
4. If CS#, OE#, LB# and UB# are low during this period, I/O pins are in the output state. Then the
5. t
6. t
7. A write occurs during the overlap of a low CS#, a low WE# and a low LB# or a low UB# (t
8. t
sampled and not 100% tested.
after the WE# transition, output remains a high impedance state.
data input signals of opposite phase to the outputs must not be applied to them.
low.
transition.
write begins at the latest transition among CS# going low, WE# going low and LB# going low or
UB# going low. A write ends at the earliest transition among CS# going high, WE# going high
and LB# going high or UB# going high.
AS
WR
CW
is measured from the latest address transition to the latest of CS#, WE#, LB# or UB# going
is measured from the earliest of CS#, WE#, LB# or UB# going high to the first address
is measured from the later of CS# going low to the end of write.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
WP
BW
AS
WR
DW
DH
OW
OHZ
WHZ
R1RW0416DI
-2
Min
12
8
8
8
8
0
0
6
0
3
Max
6
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WP
Notes
8
7
5
6
1
1
1
). A