cgy2021g NXP Semiconductors, cgy2021g Datasheet - Page 2

• Manufacturer Part Number: cgy2021g
• Description: Dcs/pcs 2 W Power Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
1997 Apr 03
V
I
P
T
CGY2021G
DD
Power Amplifier (PA) overall efficiency 50% (DCS)
34 dB gain
0 dBm input power
Gain control range >50 dB
Integrated power sensor driver
Low output noise floor of PA < 121 dBm/Hz in
DCS/PCS RX band
Wide operating temperature range 20 to +85 C
LQFP 48-pin package
Compatible with power ramping controller PCA5077 and
GaAs PA power modulator UBA1710.
(DCS: 1710 to 1785 MHz and PCS:
1850 to 1910 MHz)
1800 MHz Time Division Multiple Access (TDMA)
systems.
amb
DD
o(max)
DCS/PCS 2 W power amplifier
Hand-held transceivers for DCS/PCS applications
NUMBER
SYMBOL
TYPE
positive supply voltage
positive peak supply current
maximum output power
operating ambient temperature
LQFP48
NAME
plastic low profile quad flat package; 48 leads; body 7
PARAMETER
(1)
2
DESCRIPTION
GENERAL DESCRIPTION
The CGY2021G is a DCS/PCS class 1 GaAs Monolithic
Microwave Integrated Circuit (MMIC) power amplifier
specifically designed to operate at 4.8 V battery supply.
The chip also includes a power sensor driver so that no
directional coupler is required in the power control loop.
The PA requires only a simple low-pass filter to comply
with the DCS/PCS transmit spurious specification. It can
be switched off and its power controlled by monitoring the
actual drain voltage applied to the amplifier stages.
PACKAGE
20
MIN.
4.5
1.4
34
TYP.
7
1.4 mm
Preliminary specification
+85
MAX.
CGY2021G
V
A
dBm
SOT313-2
VERSION
C
UNIT