em658160ts-8 Etron Technology Inc., em658160ts-8 Datasheet - Page 6

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em658160ts-8

Manufacturer Part Number
em658160ts-8
Description
Synchronous Dram Sdram
Manufacturer
Etron Technology Inc.
Datasheet
Et ronT ech
Mode Register Set (MRS)
Etron Confidential
The mode register is divided into various fields depending on functionality.
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the
Burst Length to be 2, 4, 8.
Addressing Mode Select Field (A3)
The Addressing Mode can be one of two modes, both Interleave Mode or Sequential Mode.
Both Sequential Mode and Interleave Mode support burst length of 2,4 and 8.
--- Addressing Sequence of Sequential Mode
--- Addressing Sequence of Interleave Mode
Data n
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Column Address
An internal column address is performed by increasing the address from the column
address which is input to the device. The internal column address is varied by the Burst
Length as shown in the following table.
A column access is started in the input column address and is performed by inverting the
address bits in the sequence shown in the following table.
Burst Length
A2
A3
0
0
0
0
1
1
1
1
0
1
Data n
A7
A7
A7
A7
A7
A7
A7
A7
Addressing Mode
A6
A6
A6
A6
A6
A6
A6
A6
A1
0
0
1
1
0
0
1
1
Sequential
Interleave
A5
A5
A5
A5
A5
A5
A5
A5
0
n
Full Page (Even starting address)
Column Address
2 words
4 words
8 words
A4
A4
A4
A4
A4
A4
A4
A4
4Mx16 DDR SDRAM
n+1
A0
1
0
1
0
1
0
1
0
1
A3
A3
A3
A3
A3
A3
A3
A3
6
n+2
2
Burst Length
Reserved
Reserved
Reserved
Reserved
Reserved
A2
A2
A2
A2
A2# A1
A2# A1
A2# A1# A0
A2# A1# A0#
n+3
3
2
4
8
A1
A1
A1# A0
A1# A0#
n+4
4
A0
A0#
A0
A0#
n+5
5
Rev. 1.1
4 words
n+6
Burst Length
6
n+7
EM658160
7
8 words
Jan. 2002

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