em658160ts-8 Etron Technology Inc., em658160ts-8 Datasheet - Page 9

• Manufacturer Part Number: em658160ts-8
• Description: Synchronous Dram Sdram
• Manufacturer: Etron Technology Inc.

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Capacitance (V
Note: These parameters are periodically sampled and are not 100% tested.
Recommended D.C. Operating Conditions (V
Etron Confidential
Operation Current
(one bank active)
Operation Current
(one bank active)
Precharge Power-
down Standby Current
Idel Standby Current
Active Power-down
Standby Current
Active Standby
Current
Operation Current
(Read)
Operation Current
(Write)
Auto Refresh Current
Self Refresh Current
Symbol
C
C
I/O
IN
Parameter
Input Capacitance (except for CK pin)
Input Capacitance (CK pin)
DQ, DQS, DM Capacitance
DD
= 3.3V, f = 1MHz, Ta = 25 °C)
Symbol
I
I
I
I
I
I
DD4W
I
I
I
I
DD2P
DD2N
DD3P
DD3N
DD4R
DD0
DD1
DD5
DD6
Parameter
t
Active-precharge
Burst = 2, t
I
CKE ≤ V
All banks idle
CKE ≥ V
t
All banks ACT, CKE ≤ V
t
One bank; Active-Precharge,
t
Burst = 2, CL = 3, t
I
Burst = 2, CL = 3, t
t
CKE ≤ 0.2v
RC
OUT
CK
CK
RC
OUT
RC(
= min
= min, t
= t
= min
min)
= 0mA, Active-Read-Precharge
= 0mA
RAS(
IL
IH
max), t
(max), t
(min), CS# ≥ V
CK
RC
4Mx16 DDR SDRAM
= min
= min, CL = 3
CK
CK
9
CK
CK
= min
= min,
= min,
= min
IL
IH
(max),
Min.
(min),
DD
2.5
2.5
4
= 3.3V ± 0.3, Ta = 0~70 °C)
Max.
250/240/230/220/190/180/160
320/300/260/250/220/210/200
180/170/160/155/145/140/135
330/310/270/250/220/200/180
330/310/270/250/220/200/180
190/180/170/155/145/140/135
170/160/150/130/110/100/90
6.5
5
4
80/80/80/65/65/60/55
80/80/80/65/65/60/55
Rev. 1.1
- 3.3/3.5/4/5/6/7/8
Unit
Max.
pF
pF
pF
2
EM658160
Jan. 2002
UNIT
mA