GT60M323_06 TOSHIBA [Toshiba Semiconductor], GT60M323_06 Datasheet - Page 2

• Manufacturer Part Number: GT60M323_06
• Description: Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Diode forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
0
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
R
G
V
(Ta = 25°C)
R
CC
L
V
V
Symbol
GE (OFF)
CE (sat)
I
I
C
GES
CES
t
t
V
t
on
off
t
t
ies
rr
r
f
F
0
0
V
V
I
I
V
Resistive Load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 15 A, V
= 60 A, di/dt = −20 A/μs
= 60 mA, V
= 60 A, V
V
V
I
GE
CE
C
= 900 V, V
= 10 V, V
= ±25 V, V
= 600 V, I
= ±15 V, R
2
t
GE
90%
d (off)
GE
Test Condition
CE
GE
C
= 0
GE
= 15 V
CE
G
= 60 A
= 5 V
= 0, f = 1 MHz
= 51 Ω
= 0
= 0
t
90%
off
t
f
10%
(Note 1)
10%
10%
Min
4.0
―
―
―
―
―
―
―
―
―
―
t
on
t
4200
r
Typ.
0.25
0.37
0.09
0.40
2.3
1.1
1.4
―
―
―
90%
GT60M323
2006-11-01
±500
0.20
Max
0.1
7.0
2.8
1.9
3.0
―
―
―
―
Unit
mA
nA
pF
μs
µs
V
V
V