GT8G103_06 TOSHIBA [Toshiba Semiconductor], GT8G103_06 Datasheet
GT8G103_06
Manufacturer Part Number
GT8G103_06
Description
STROBE FLASH APPLICATIONS
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.GT8G103_06.pdf
(5 pages)
STROBE FLASH APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
3rd Generation
Enhancement−Mode
Low Saturation Voltage: V
4.5 V Gate Drive
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Switching Time
Thermal Resistance
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / μs.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
CHARACTERISTIC
CHARACTERISTIC
Rise Time
Turn−on Time
Fall Time
Turn−off Time
Ta = 25°C
Tc = 25°C
Pulse
1 ms
DC
DC
CE (sat)
= 8 V (Max.) (@I
V
SYMBOL
SYMBOL
V
R
GE (OFF)
V
V
V
CE (sat)
I
I
th (j−c)
T
C
GES
I
CES
P
P
GES
GES
t
t
CES
I
CP
T
on
off
stg
t
t
GT8G103
C
ies
C
C
r
f
j
V
V
I
I
V
C
C
GE
CE
CE
= 1 mA, V
= 150 A, V
−55~150
RATING
C
= 400 V, V
= 10 V, V
= 6 V, V
400
150
150
= 150 A)
1.3
±6
±8
20
8
1
TEST CONDITION
CE
CE
GE
GE
GE
= 5 V
= 0
= 4.5 V (Pulsed)
= 0, f = 1 MHz
―
= 0
UNIT
°C
°C
W
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA (A) 2-7B5C (B) 2-7B6C
(A)
(B)
MIN
0.5
―
―
―
―
―
―
―
―
―
TYP.
1900
1.2
1.4
1.8
2.4
―
―
―
―
5
GT8G103
2006-11-02
MAX
6.25
⎯
⎯
1.2
10
10
―
―
―
―
8
−
Unit: mm
°C / W
UNIT
μA
μA
pF
μs
V
V
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GT8G103_06 Summary of contents
Page 1
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage (sat) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage DC Gate−Emitter Voltage Pulse DC Collector ...
Page 2
GT8G103 2006-11-02 ...
Page 3
GT8G103 2006-11-02 ...
Page 4
GT8G103 2006-11-02 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...