SGM2016AP SONY [Sony Corporation], SGM2016AP Datasheet - Page 2

• Manufacturer Part Number: SGM2016AP
• Description: GaAs N-channel Dual-Gate MES FET
• Manufacturer: SONY [Sony Corporation]

Typical Characteristics (Ta = 25°C)
Electrical Characteristics
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
40
30
20
10
0
0
(V
G2S
1
V
= 1.5V)
DS
– Drain to source voltage [V]
Item
2
I
D
vs. V
3
DS
4
5
I
I
I
I
V
V
gm
Ciss
Crss
NF
Ga
DSX
G1SS
G2SS
DSS
G1S
G2S
Symbol
(OFF)
(OFF)
6
–0.3V
–0.6V
–0.9V
V
= 0V
G1S
– 2 –
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
V
f = 1kHz
V
I
V
f = 1MHz
V
I
V
f = 900MHz
D
D
D
D
D
DS
G1S
G2S
G1S
G2S
DS
G2S
G1S
DS
DS
G1S
G2S
DS
G2S
DS
G1S
DS
G2S
DS
G2S
DS
G2S
= 100µA
= 100µA
= 10mA
= 10mA
= 10mA
Conditions
= 12V
= 0V
= 0V
= 5V
= 5V
= 5V
= 5V
= 5V
= 5V
= –4V
= 0V
= –4.5V
= 0V
= –4.5V
= 0V
= 0V
= 0V
= 0V
= 0V
= 1.5V
= 1.5V
= 1.5V
25
20
15
10
5
0
–2.0
(V
DS
V
= 5V)
G1S
–1.5
– Gate 1 to source voltage [V]
Min.
10
20
17
I
D
vs. V
–1.0
Typ.
0.9
1.2
30
25
21
G1S
V
G2S
–0.5
= 1.5V
Max.
SGM2016AM/AP
–2.5
–2.5
2.0
2.0
50
–8
–8
35
40
(Ta = 25°C)
0
Unit
mA
ms
µA
µA
µA
dB
dB
pF
fF
1.0V
0.5V
0V
–0.5V
–1.0V
V
V