SGM2016AP SONY [Sony Corporation], SGM2016AP Datasheet - Page 3

• Manufacturer Part Number: SGM2016AP
• Description: GaAs N-channel Dual-Gate MES FET
• Manufacturer: SONY [Sony Corporation]

3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
5
0
5
4
3
2
1
0
0
–2.0
–1.2
0
(V
(V
(V
DS
2
DS
DS
–1.0
V
V
= 5V)
= 5V, V
= 5V, f = 900MHz)
G2S
G1S
4
–1.5
– Gate 2 to source voltage [V]
– Gate 1 to source voltage [V]
–0.8
6
I
D
G2S
– Drain current [mA]
NF, Ga vs. I
NF vs. V
8
I
D
= 1.5V, f = 900MHz)
–0.6
vs. V
10
–1.0
12
–0.4
G2S
Ga
NF
G1S
14
D
–0.2
–0.5
16
V
G2S
18
= 0.5V
0
1.5V
1.0V
20 22
0.2
0
V
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
30
25
20
15
10
5
0
G1S
– 3 –
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
30
25
20
15
10
0
5
0
0
–2.0
–1.2
0
(V
(V
0.2
DS
DS
–1.0
NFmin
V
V
= 5V)
= 5V, f = 900MHz)
0.4
G1S
G1S
(V
–1.5
DS
0.6
– Gate 1 to source voltage [V]
– Gate 1 to source voltage [V]
–0.8
= 5V, V
f – Frequency [GHz]
Ga
0.8
gm vs. V
Ga vs. V
NF, Ga vs. f
–0.6
1.0
G2S
–1.0
1.2
= 1.5V, I
–0.4
G1S
G1S
1.4
–0.2
D
1.6
–0.5
V
= 10mA)
G2S
1.8
SGM2016AM/AP
= 1.5V
0
0.5V
1.0V
2.0
0.2
2.2
0
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
35
30
25
20
15
10
5
G2S