SGM2016AP SONY [Sony Corporation], SGM2016AP Datasheet - Page 4

• Manufacturer Part Number: SGM2016AP
• Description: GaAs N-channel Dual-Gate MES FET
• Manufacturer: SONY [Sony Corporation]

S-parameter vs. Frequency Characteristics (V
Noise Figure Characteristics (V
(MHz)
(MHz)
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
100
200
300
400
500
600
700
800
900
200
300
400
500
600
700
800
900
f
f
NFmin
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
MAG
(dB)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
S11
–11.8
–16.0
–20.0
–24.1
–27.8
–31.3
–34.7
–38.0
–40.9
–44.0
–46.8
–49.7
–52.4
–54.9
–57.5
–59.6
–61.6
–63.4
Gamma Optimum
ANG
ANG
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
–3.8
–7.9
DS
= 5V, V
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
MAG
MAG
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
7.5
G2S
= 1.5V, I
S21
DS
= 5V, V
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
– 4 –
ANG
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
96.9
91.8
86.6
81.4
76.4
71.5
(Ω)
Rn
D
= 10mA)
G2S
= 1.5V, I
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
MAG
D
S12
= 10mA)
109.0
113.0
ANG
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
MAG
S22
SGM2016AM/AP
(Z
–11.5
–12.8
–14.4
–15.6
–17.2
–18.2
–20.0
–21.3
–22.9
–24.1
–25.8
–27.3
–28.7
ANG
0
–1.3
–3.0
–4.2
–6.1
–7.2
–8.8
–9.9
= 50Ω)