PSMN1R0-30YLC_11 PHILIPS [NXP Semiconductors], PSMN1R0-30YLC_11 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R0-30YLC_11
• Description: N-channel 30 V 1.15 m? logic level MOSFET in LFPAK using NextPower technology
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
PSMN1R0-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(m)
R
DS on
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
25
GS1
I
Q
2.4
D
GS
Q
GS2
50
V
Q
GS
G(tot)
(V) =2.6
Q
GD
4.5
75
All information provided in this document is subject to legal disclaimers.
003a a e 945
003aaa508
I
D
(A)
2.8
3.5
10
3.0
100
Rev. 4 — 4 July 2011
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
GS
a
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
6V
0
PSMN1R0-30YLC
40
60
4.5V
V
15V
80
DS
= 24V
120
Q
© NXP B.V. 2011. All rights reserved.
V
G
003a a e 952
GS
003a a e 946
T
(nC)
j
( C)
= 10V
180
120
9 of 15