MTB6N60 MOTOROLA [Motorola, Inc], MTB6N60 Datasheet

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MTB6N60

Manufacturer Part Number
MTB6N60
Description
TMOS POWER FET 6.0 AMPERES 600 VOLTS
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

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0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS
High Energy Power FET
D 2 PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R DS(on) capabilities. This advanced
TMOS E–FET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation @ 25 C
Derate above 25 C
Total Power Dissipation @ T A = 25 C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, Peak I L = 9.0 Apk, L = 10 mH, R G = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
The D 2 PAK package has the capability of housing a larger die
Motorola, Inc. 1997
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
— Continuous @ 100 C
— Single Pulse (t p
E-FET.
— Junction to Ambient
— Junction to Ambient (1)
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
10 ms)
Rating
G
D
S
Symbol
T J , T stg
V DGR
V GSM
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
MTB6N60E
P D
T L
I D
I D
CASE 418B–03, Style 2
TMOS POWER FET
R DS(on) = 1.2 OHM
Motorola Preferred Device
6.0 AMPERES
600 VOLTS
– 55 to 150
Order this document
D 2 PAK
Value
62.5
600
600
125
405
260
6.0
4.6
1.0
2.5
1.0
18
50
20
40
by MTB6N60E/D
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTB6N60 Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 D G Rating 10 ms) Order this document by MTB6N60E/D MTB6N60E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS R DS(on) = 1.2 OHM CASE 418B–03, Style PAK ...

Page 2

... MTB6N60E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 600 Vdc Vdc 600 Vdc Vdc 125 C) Gate– ...

Page 3

... Figure 4. On–Resistance versus Drain Current 10000 1000 100 10 1 100 125 150 0 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTB6N60E 100 – 3.0 3.5 4.0 4.5 5.0 5.5 6 DRAIN CURRENT (AMPS) ...

Page 4

... MTB6N60E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTB6N60E t d(off d(on) 10 ...

Page 6

... MTB6N60E 100 SINGLE PULSE 100 1 DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 di/ 0. ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTB6N60E Board Material = 0.0625 G–10/FR– Copper ...

Page 8

... MTB6N60E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 18. Typical Solder Heating Profile MTB6N60E STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 Mfax is a trademark of Motorola, Inc. MTB6N60E/D ...

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