MTB6N60 MOTOROLA [Motorola, Inc], MTB6N60 Datasheet - Page 2
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MTB6N60
Manufacturer Part Number
MTB6N60
Description
TMOS POWER FET 6.0 AMPERES 600 VOLTS
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MTB6N60.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTB6N60
Manufacturer:
MOTOROLA
Quantity:
4 341
Company:
Part Number:
MTB6N60E1
Manufacturer:
ON
Quantity:
35 000
Company:
Part Number:
MTB6N60E1
Manufacturer:
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Quantity:
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(1) Pulse Test: Pulse Width
(2) Switching characteristics are independent of operating junction temperature.
MTB6N60E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = 20 Vdc, V DS = 0 Vdc)
Gate Threshold Voltage
Static Drain–to–Source On–Resistance (V GS = 10 Vdc, I D = 3.0 Adc)
Drain–to–Source On–Voltage
Forward Transconductance (V DS = 15 Vdc, I D = 3.0 Adc)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 600 Vdc, V GS = 0 Vdc)
(V DS = 600 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 Adc)
Temperature Coefficient (Negative)
(V GS = 10 Vdc, I D = 6.0 Adc)
(V GS = 10 Vdc, I D = 3.0 Adc, T J = 125 C)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
300 s, Duty Cycle
Characteristic
(I S = 6.0 Adc, V GS = 0 Vdc, T J = 125 C)
(T J = 25 C unless otherwise noted)
(V
(V DS = 300 Vdc, I D = 6.0 Adc,
(V
(V DS = 300 Vdc, I D = 6.0 Adc,
( DS
(V
(V DS = 25 Vdc, V GS = 0 Vdc,
(I S = 6.0 Adc, V GS = 0 Vdc)
(I
(I S = 6.0 Adc, V GS = 0 Vdc,
( S
dI S /dt = 100 A/ s)
6 0 Ad
2%.
V GS = 10 Vdc
V GS = 10 Vdc,
V GS = 10 Vdc)
300 Vd I
300 Vd I
25 Vdc V
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
G
, GS
V
, D
)
6 0 Ad
6 0 Ad
0 Vd
0 Vdc
,
,
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
600
2.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1498
0.94
35.5
14.1
15.8
0.83
0.72
Typ
689
158
266
166
100
3.0
7.1
6.0
5.5
8.1
2.5
4.5
7.5
29
14
19
40
26
—
—
—
—
—
2100
Max
100
217
1.0
4.0
1.2
8.6
7.6
1.5
—
—
50
—
—
56
30
40
80
50
50
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
Ohms
mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
nH
nH
Adc
pF
ns
ns
C