BUZ102SL-4 SIEMENS [Siemens Semiconductor Group], BUZ102SL-4 Datasheet
BUZ102SL-4
Related parts for BUZ102SL-4
BUZ102SL-4 Summary of contents
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SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • rated Type V DS BUZ 102SL Maximum Ratings Parameter Continuous drain current one channel active °C ...
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Thermal Characteristics Parameter Thermal resistance, junction - soldering point Thermal resistance, junction - ambient 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current, pulsed °C A Inverse diode forward voltage 12 ...
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Power dissipation tot A 2.8 W 2.4 P 2.2 tot 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 140 Semiconductor Group Preliminary data Drain current ...
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Typ. output characteristics parameter µ ° tot ...
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Drain-source on-resistance (on) j parameter 6 0.09 R 0.07 DS (on) 0.06 0.05 98% 0.04 typ 0.03 0.02 0.01 0.00 -60 - Typ. ...
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Avalanche energy parameter 6 12 260 mJ 220 E AS 200 180 160 140 120 100 80 60 ...