BUZ102SL-4 SIEMENS [Siemens Semiconductor Group], BUZ102SL-4 Datasheet - Page 8

• Manufacturer Part Number: BUZ102SL-4
• Description: SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 12.7 mH
260
220
200
180
160
140
120
100
mJ
80
60
40
20
65
61
59
57
55
53
51
49
V
0
-60
20
= ( T
D
40
-20
= 6.2 A, V
j
)
60
20
80
AS
DD
= ( T
100
60
= 25 V
j
)
120
100
140
°C
T
T
°C
j
j
180
180
Preliminary data
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
10
D puls
)
20
0,2
= 6 A
V
DS max
30
40
50
BUZ 102SL-4
60
0,8
23/Oct/1997
70
V
Q
DS max
nC
Gate
90