pdtc115t NXP Semiconductors, pdtc115t Datasheet - Page 5

• Manufacturer Part Number: pdtc115t
• Description: Pdtc115t Series Npn Resistor-equipped Transistors; R1 = 100 Kohm, R2 = Open
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
Table 8:
T
9397 750 14021
Product data sheet
Symbol
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
Fig 1. DC current gain as a function of collector
FE
CEsat
c
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
h
FE
10
10
3
2
10
V
current; typical values
amb
amb
amb
CE
1
Characteristics
= 5 V
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
= 100 C
= 25 C
= 40 C
1
(1)
(2)
(3)
10
Conditions
V
V
V
T
V
V
I
I
f = 1 MHz
C
E
j
CB
CE
CE
EB
CE
= 150 C
= i
= 5 mA; I
I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
C
e
006aaa058
(mA)
= 0 A; V
C
Rev. 04 — 17 February 2005
C
B
10
E
B
B
= 0 A
= 0.25 mA
= 1 mA
2
= 0 A
= 0 A
= 0 A;
CB
NPN resistor-equipped transistors; R1 = 100 k , R2 = open
= 10 V;
Fig 2. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
1
2
10
I
function of collector current; typical values
C
amb
amb
amb
/I
1
B
= 20
= 100 C
= 25 C
= 40 C
Min
-
-
-
-
100
-
70
-
PDTC115T series
1
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
100
-
10
Max
100
1
50
100
-
150
130
2.5
I
C
(mA)
006aaa059
10
2
Unit
nA
nA
mV
k
pF
A
A
5 of 10