pmbt3946ypn NXP Semiconductors, pmbt3946ypn Datasheet

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pmbt3946ypn

Manufacturer Part Number
pmbt3946ypn
Description
40 V, 200 Ma Npn/pnp General-purpose Double Transistor
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
I
I
I
Table 2.
Type number
PMBT3946YPN SOT363
Symbol
Per transistor; for the PNP transistor with negative polarity
V
I
h
C
FE
CEO
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Rev. 01 — 12 May 2009
General-purpose double transistor
Board-space reduction
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
Product overview
Quick reference data
Package
NXP
JEITA
SC-88
Conditions
open base
V
I
C
CE
= 10 mA
= 1 V;
NPN/NPN
complement
PMBT3904YS
PNP/PNP
complement
PMBT3906YS
Min
-
-
100
Typ
-
-
180
Product data sheet
Package
configuration
very small
Max
40
200
300
Unit
V
mA

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pmbt3946ypn Summary of contents

Page 1

... V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 — 12 May 2009 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number PMBT3946YPN SOT363 1.2 Features I General-purpose double transistor I Board-space reduction 1.3 Applications I General-purpose switching and amplification 1 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PMBT3946YPN SC-88 4. Marking Table 5. Type number PMBT3946YPN [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Pinning ...

Page 3

... P tot (mW) 300 200 100 FR4 PCB, standard footprint Per device: Power derating curve Rev. 01 — 12 May 2009 PMBT3946YPN Conditions Min open emitter - open emitter - open base - open collector - - single pulse single pulse ...

Page 4

... V, 200 mA NPN/PNP general-purpose double transistor Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point thermal resistance from in free air junction to ambient Rev. 01 — 12 May 2009 PMBT3946YPN Min Typ Max [ 543 - - 290 [ 357 006aab114 ...

Page 5

... 15.7 kHz delay time mA; I Bon rise time turn-on time storage time fall time turn-off time Rev. 01 — 12 May 2009 PMBT3946YPN Min Typ = 180 80 180 100 180 60 105 30 50 ...

Page 6

... 15.7 kHz delay time mA; I Bon rise time turn-on time storage time fall time turn-off time Rev. 01 — 12 May 2009 PMBT3946YPN Min Typ = 180 80 180 100 180 60 130 30 50 ...

Page 7

... TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aab117 1.3 V BEsat (V) 0.9 0.5 0 (mA (1) T (2) T (3) T Fig 6. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 12 May 2009 PMBT3946YPN 006aab116 I (mA) = 5.0 B 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 amb 006aab118 (1) (2) (3) 1 ...

Page 8

... 150 C amb = 25 C amb = 55 C amb TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 12 May 2009 PMBT3946YPN 006aab119 (1) ( (mA) C © NXP B.V. 2009. All rights reserved ...

Page 9

... V BEsat (V) 1.0 0.8 0.6 0.4 0 (mA (1) T amb (2) T amb (3) T amb Fig 11. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 12 May 2009 PMBT3946YPN 006aab121 (mA) = 5.0 B 4.5 4.0 3.5 2.5 3.0 2.0 1.5 1.0 0 006aab124 (1) (2) ( ...

Page 10

... 150 C amb = 25 C amb = 55 C amb typical values R (probe) oscilloscope 450 Rev. 01 — 12 May 2009 PMBT3946YPN 006aab122 (mA (probe) o oscilloscope 450 DUT mlb826 © NXP B.V. 2009. All rights reserved. ...

Page 11

... 2.2 1.8 6 2.2 1.35 2.0 1.15 pin 1 index 1 0.65 1.3 Dimensions in mm Packing methods Package Description SOT363 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 12 May 2009 PMBT3946YPN (probe) o oscilloscope 450 DUT mgd624 1.1 0 0.25 0.3 0.10 0.2 06-03-16 [1] ...

Page 12

... Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 12 May 2009 PMBT3946YPN 0 0 Dimensions in mm 1.5 0.3 2.5 1.5 Dimensions in mm direction during soldering solder lands solder resist solder paste occupied area sot363_fr solder lands solder resist occupied area preferred transport sot363_fw © ...

Page 13

... Revision history Table 10. Revision history Document ID Release date PMBT3946YPN_1 20090512 PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Data sheet status Change notice Product data sheet - Rev. 01 — 12 May 2009 PMBT3946YPN Supersedes - © NXP B.V. 2009. All rights reserved ...

Page 14

... Export might require a prior authorization from national authorities. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 12 May 2009 PMBT3946YPN © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 May 2009 Document identifier: PMBT3946YPN_1 ...

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