CHA2293-99F/00 UMS [United Monolithic Semiconductors], CHA2293-99F/00 Datasheet

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CHA2293-99F/00

Manufacturer Part Number
CHA2293-99F/00
Description
24.5-29.5GHz Low Noise, Variable Gain Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The CHA2293 is a high gain
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22931201 -20-July-01
Frequency range : 24.5-29.5GHz
3dB Noise Figure.
24dB gain
Gain control range: 15dB
Low DC power consumption, 160mA @ 5V
Chip size : 2.32 X 1.23 X 0.10 mm
Gctrl
24.5-29.5GHz Low Noise, Variable Gain Amplifier
Fop
NF
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
Parameter
four-stage
1/7
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
24
Typical on wafer measurements :Gain & NF
Specifications subject to change without notice
Gain (dB)
Vg1
V5
25
Min
24.5
NF (dB)
26
Frequency (GHz)
Typ
150
24
15
3
Vg
27
CHA2293
Max
29.5
3.5
Vd
28
Vc
Unit
GHz
29
mA
dB
dB
dB
30

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CHA2293-99F/00 Summary of contents

Page 1

... Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293 is a high gain monolithic low noise amplifier with variable gain designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process ...

Page 2

... Maximum peak input power overdrive (2) Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22931201 -20-July-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter V5 Parameter ...

Page 3

... V5=Vd= 5 Volt, Vg1 =Vg = -0.3V 30 Vc=1. Vc=-0. Control gain range versus frequency Ref. : DSCHA22931201 -20-July-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Frequency (GHz Frequency (GHz) 3/7 Specifications subject to change without notice ...

Page 4

... Gain & Output power @ 24-26 GHz Ref. : DSCHA22931201 -20-July-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 0.5 Control voltage Vc (V) Gain versus control voltage -20 Input power (dBm) 4/7 Specifications subject to change without notice ...

Page 5

... Vc= +1.2V Vc= +0. Vc= -0. Ref. : DSCHA22931201 -20-July-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 -20 Input power (dBm) 27 Frequency ( GHz) Gain & Noise Figure versus Vc 5/7 Specifications subject to change without notice CHA2293 -15 -10 ...

Page 6

... Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22931201 -20-July-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Bonding pad positions ...

Page 7

... Ordering Information Chip form : CHA2293-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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