CHA2294-99F/00 UMS [United Monolithic Semiconductors], CHA2294-99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA2294-99F/00
• Description: 35-40GHz Low Noise, Variable Gain Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

35-40GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2=Vd,3,4= 5V
Absolute Maximum Ratings
Tamb. = 25°C (1)
VSWRout Output VSWR (1)
(1) These values are representative of on-wafer measurements that are made without bonding
(2) For optimum noise figure, the bias current Id1 should be adjust to 20mA with Vg1 voltage.
(3) With Id1=20mA, adjust Vg2,3,4 voltage for a total drain current around 120mA.
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
VSWRin
Symbol
wires at RF ports.
Ref. : DSCHA22942183 -01-July-02
P1dB
Gctrl
Tstg
Vdg
Fop
Tch
Pin
NF
Id1
Vd
Vd
Vg
Vc
Ta
G
Is
Id
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
DC voltage
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
Tel.: [phone] - Fax : [phone]
Maximum Drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum Control bias voltage
Operating temperature range
Storage temperature range
Maximum drain to gate voltage (Vd - Vg)
Maximum input power overdrive (2)
Maximum channel temperature
Parameter
Parameter
V5= Vd2=Vd3,4
Vc
2/6
Specifications subject to change without notice
Min
-1.5
35
-2.5 to +0.4
-55 to +125
-40 to +85
[-0.7, 1.2]
Values
+5.25
+175
+1.5
+5.0
200
+15
Typ
±1.0
120
22
50
15
11
20
4
5
CHA2294
Max
2.0:1
1.5:1
1.3
40
Unit
dBm
dBm
GHz
Unit
mA
mA
mA
dB
dB
dB
dB
dB
°C
°C
°C
V
V
V
V
V
V