MBM29F080A-55PF SPANSION [SPANSION], MBM29F080A-55PF Datasheet - Page 24
MBM29F080A-55PF
Manufacturer Part Number
MBM29F080A-55PF
Description
FLASH MEMORY CMOS 8M (1M x 8) BIT
Manufacturer
SPANSION [SPANSION]
Datasheet
1.MBM29F080A-55PF.pdf
(44 pages)
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•
*1 : Test Conditions:
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output HIGH-Z
Output Enable to Output HIGH-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
AC CHARACTERISTICS
Read Only Operations Characteristics
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Notes :
Parameter
MBM29F080A-55: C
MBM29F080A-70/-90: C
Device
Under
Test
t
t
t
t
t
t
t
JEDEC Standard
AVAV
AVQV
ELQV
GLQV
EHQZ
GHQZ
AXQX
C
L
—
L
= 30 pF including jig capacitance
Symbol
L
= 100 pF including jig capacitance
t
t
t
t
t
t
t
t
RC
ACC
CE
OE
DF
DF
OH
READY
Test Conditions
Diode=1N3064
or Equivalent
6.2 k
*2 : Test Conditions:
CE = V
OE = V
OE = V
Setup
Test
—
—
—
—
—
—
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V or 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
5.0 V
IL
IL
IL
2.7 k
MBM29F080A
Min Max Min Max
55
—
—
—
—
—
—
0
-55 *
Diode=1N3064
or Equivalent
55
55
30
20
20
20
1
—
—
70
—
—
—
—
—
—
0
-70 *
70
70
30
20
20
20
—
—
2
Min
90
—
—
—
—
—
—
0
-90 *
-55/-70/-90
Max
2
90
90
40
20
20
20
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
s
23
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