TDA8920BJ PHILIPS [NXP Semiconductors], TDA8920BJ Datasheet - Page 25

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TDA8920BJ

Manufacturer Part Number
TDA8920BJ
Description
2 X 100 W class-D power amplifier
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

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Preliminary data sheet
Fig 22. Output power as a function of supply voltage;
Fig 24. Gain as a function of frequency; R
(1) 1
(2) 1
(3) 2
(4) 2
(dB)
(1) 1
(2) 1
(3) 2
(4) 2
(W)
P
G
200
o
160
120
80
40
45
40
35
30
25
20
0
f = 1 kHz.
THD + N = 0.5 %.
V
and C
10
10
i
= 100 mV; R
6
8
3
4
8
6
4
3
i
BTL configuration.
BTL configuration.
SE configuration.
SE configuration.
BTL configuration.
BTL configuration.
BTL configuration.
BTL configuration.
= 330 pF.
15
10
2
s
= 5.6 k ; C
20
10
3
25
i
= 330 pF; V
(2)
(1)
(3)
(4)
10
(1)
(2)
(3)
(4)
4
30
001aab237
001aab239
f (Hz)
V
S
p
S
= 27 V.
(V)
= 5.6 k
10
Rev. 01 — 1 October 2004
35
5
Fig 23. Output power as a function of supply voltage;
Fig 25. Gain as a function of frequency; R
(1) 1
(2) 1
(3) 2
(4) 2
(dB)
(1) 1
(2) 1
(3) 2
(4) 2
(W)
P
G
240
160
o
80
45
40
35
30
25
20
0
f = 1 kHz.
THD + N = 10 %.
V
C
10
10
i
i
= 100 mV; R
= 330 pF.
6
8
3
4
8
6
4
3
BTL configuration.
BTL configuration.
SE configuration.
SE configuration.
BTL configuration.
BTL configuration.
BTL configuration.
BTL configuration.
15
10
2
2
s
= 0 ; C
100 W class-D power amplifier
20
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
3
i
= 330 pF; V
25
(1)
(2)
(3)
(4)
TDA8920B
10
(1)
(2)
(3)
(4)
4
30
p
001aab238
001aab240
f (Hz)
= 27 V.
V
S
S
(V)
= 0
10
35
5
and
25 of 34

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