CY8C20111_11 CYPRESS [Cypress Semiconductor], CY8C20111_11 Datasheet - Page 28

• Manufacturer Part Number: CY8C20111_11
• Manufacturer: CYPRESS [Cypress Semiconductor]

12. Electrical Specifications
12.1 Absolute Maximum Ratings
12.2 Operating Temperature
13. DC Electrical Characteristics
13.1 DC Chip Level Specifications
Document Number: 001-53516 Rev. *G
T
T
t
T
V
V
V
I
ESD
LU
T
T
V
I
Parameter
Parameter
Parameter
BAKETIME
MIO
DD
A
A
STG
BAKETEMP
DD
IO
IOZ
J
DD
Storage temperature
Bake Temperature
Bake Time
Ambient temperature with power
applied
Supply voltage on V
DC input voltage
DC voltage applied to tri-state
Maximum current into any GPIO pin
Electro static discharge voltage
Latch up current
Ambient temperature
Junction temperature
Supply voltage
Supply current
Description
Description
Description
DD
relative to V
SS
V
V
package
SS
SS
2000
label
2.40
–0.5
Min
See
Min
–40
–40
Min
–55
–40
–25
–
–
–
– 0.5
– 0.5
Typ
Typ
Typ
125
1.5
25
–
–
–
–
–
–
–
–
–
–
–
V
V
Package
DD
DD
+100
+100
label
Max
Max
5.25
Max
+6.0
See
+85
+85
+50
200
2.5
72
–
+ 0.5
+ 0.5
Hours
Unit
Unit
Unit
mA
mA
mA
°C
°C
°C
°C
°C
V
V
V
V
V
Conditions are V
Higher storage temperatures reduce data
retention time. Recommended storage
temperature is +25 °C ± 25 °C (0 °C to
50 °C). Extended duration storage tempera-
tures above 65 °C degrade reliability
Human body model ESD
CY8C20111, CY8C20121
DD
Notes
Notes
Notes
= 3.10 V, T
Page 28 of 43
A
= 25 °C
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