SA5222D PHILIPS [NXP Semiconductors], SA5222D Datasheet
SA5222D
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SA5222D Summary of contents
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... CC1 CC2 OUT 2 7 GND OUT 4 5 GND GND 1 2 SD00360 Figure 1. Pin Configuration ORDER CODE DWG # SA5222D SOT96-1 RATING UNITS 6 V -40 to +85 C -55 to +150 C C -65 to +150 0. 158 C/W. Derate JA RATING UNITS 4.5 to 5.5 V -40 to +85 ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier DC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at T SYMBOL SYMBOL PARAMETER PARAMETER V Input bias voltage IN V Output bias voltage O V Output offset voltage OS I Supply ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier TEST CIRCUITS SINGLE-ENDED DIFFERENTIAL V V OUT OUT S22 - ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier TEST CIRCUITS (continued) PULSE GEN 0.1uF TEST CIRCUITS (continued 2.25 1.80 1.35 0.90 0.45 0.00 –0.45 –0.90 –1.35 –1.80 –2.25 –200 –160 Procedure 1 R measured ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier – 4.5 5 SUPPLY VOLTAGE (V) Figure 7. I vs. V and Temperature CC CC 1.8 –40 C 1.7 1 1.5 85 ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier – Iin = 4.5 5 SUPPLY VOLTAGE (V) Figure 13. Differential Transresistance vs. V Temperature 50 – ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier 200 PIN 7 OUTPUT 100 0 PIN 6 OUTPUT –100 + –200 1 10 FREQUENCY (MHz) Figure 19. Phase vs. Frequency 8 0.1 F COUPLING CAP’s ...
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Philips Semiconductors Low-power FDDI transimpedance amplifier VCC1 GND 1 IN GND 1 Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after ...