W25Q16CLDAIG WINBOND [Winbond], W25Q16CLDAIG Datasheet - Page 47
W25Q16CLDAIG
Manufacturer Part Number
W25Q16CLDAIG
Description
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
Manufacturer
WINBOND [Winbond]
Datasheet
1.W25Q16CLDAIG.pdf
(77 pages)
- Current page: 47 of 77
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W25Q16CL
11.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “t
” following a previous Resume instruction.
SUS
Figure 26. Erase/Program Resume Instruction Sequence
Publication Release Date: July 08, 2010
- 47 -
Preliminary - Revision A
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