NAND02GW3B2CN1F STMICROELECTRONICS [STMicroelectronics], NAND02GW3B2CN1F Datasheet - Page 54

• Manufacturer Part Number: NAND02GW3B2CN1F
• Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC And AC parameters
Figure 29. Program/Erase Enable waveform
Figure 30. Program/Erase Disable waveform
11.1
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RB
RB
WP
WP
I/O
I/O
W
W
Ready/Busy Signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
High
32,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 31
tVHWH
tVLWH
80h
80h
and
Figure 33
R P min
R P min 1.8V
R P min 3V
show the electrical characteristics for the Ready/Busy
=
(
-------------------------------------------------------------
(
V DDmax V OLmax
(
)
P
)
=
I OL
=
can be calculated using the following equation:
r
-------------------------- -
8mA
.
-------------------------- -
3mA
–
3.2V
+
1.85V
+
I L
+
I L
I L
10h
10h
NAND01G-B2B, NAND02G-B2C
)
ai12477
ai12478
P