NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 42

• Manufacturer Part Number: NAND04GW3B2AN1E
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

DC and AC parameters
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table
measurement conditions when relying on the quoted parameters.
Table 17.
Table 18.
1. T
2. Input/output capacitances double in stacked devices.
Supply Voltage (V
Ambient Temperature (T
Load Capacitance (C
and C
Input Pulses Voltages
Input and Output Timing Ref. Voltages
Output Circuit Resistor R
Input Rise and Fall Times
Symbol
C
C
A
I/O
IN
= 25°C, f = 1MHz. C
17. Designers should check that the operating conditions in their circuit match the
L
)
Input Capacitance
Input/Output
Capacitance
Operating and AC Measurement Conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
IN
A
ref
)
(2)
and C
Parameter
(1)
I/O
are not 100% tested.
Test Condition
V
V
IN
IL
Grade 1
Grade 6
= 0V
= 0V
NAND04GW3B2B, NAND08GW3B2A
Typ
Min
–40
2.7
50
0
0
NAND Flash
V
8.35
DD
5
/2
Max
Max
10
10
V
3.6
70
85
DD
Units
Unit
pF
pF
°C
°C
pF
k
ns
V
V
V