HYB25D256160CC-5 QIMONDA [Qimonda AG], HYB25D256160CC-5 Datasheet - Page 18

no-image

HYB25D256160CC-5

Manufacturer Part Number
HYB25D256160CC-5
Description
256-Mbit Double-Data-Rate SDRAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB25D256160CC-5
Manufacturer:
SIEMENS
Quantity:
1
1)
2) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (
Notes
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n.
4. All states and sequences not shown are illegal or reserved.
Rev. 2.3, 2007-03
03062006-8CCM-VPUW
Current State
Self Refresh
Self Refresh
Power Down
Power Down
All Banks Idle
All Banks Idle
Bank(s) Active
V
clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.
REF
must be maintained during Self Refresh operation
CKE n-1
Previous Cycle
L
L
L
L
H
H
H
H
CKEn
Current Cycle
L
H
L
H
L
L
L
H
Command n
X
Deselect or NOP
X
Deselect or NOP
Deselect or NOP
AUTO REFRESH
Deselect or NOP
See
18
Table 13
HY[B/I]25D256[16/40/80]0C[E/C/F/T](L)
Action n
Maintain Self-Refresh
Exit Self-Refresh
Maintain Power-Down
Exit Power-Down
Precharge Power-Down Entry
Self Refresh Entry
Active Power-Down Entry
Truth Table 2: Clock Enable (CKE)
256 Mbit Double-Data-Rate SDRAM
t
XSNR
) period. A minimum of 200
Internet Data Sheet
TABLE 12
Note
1)
2)

Related parts for HYB25D256160CC-5