HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 19
HYB18L256160B
Manufacturer Part Number
HYB18L256160B
Description
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet
1.HYB18L256160B.pdf
(58 pages)
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2.4.5
Subsequent to programming the mode register with CAS
latency and burst length, READ bursts are initiated with a
READ command, as shown in
the DQs are shown in
operations and therefore are omitted from all subsequent
timing diagrams.
The starting column and bank addresses are provided with
the READ command and Auto Precharge is either enabled or
disabled for that burst access. If Auto Precharge is enabled,
the row being accessed starts precharge at the completion of
the burst, provided
READ commands used in the following illustrations, Auto
Precharge is disabled.
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
t
RAS
READ
has been satisfied. For the generic
Figure
Figure
12; they apply to all read
11. Basic timings for
19
Basic READ Timing Parameters for DQs
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
READ Command
FIGURE 11
FIGURE 12
Data Sheet