HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 25
HYB18L256160B
Manufacturer Part Number
HYB18L256160B
Description
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet
1.HYB18L256160B.pdf
(58 pages)
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Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.5.3
READ - DQM Operation
DQM may be used to suppress read data and place the output buffers into High-Z state. The generic timing parameters as
listed in
Table 12
also apply to this DQM operation. The read burst in progress is not affected and will continue as programmed.
FIGURE 20
READ Burst - DQM Operation
Rev. 1.73, 2006-09
25
01302004-CZ2R-J9SE