M58WR064 STMICROELECTRONICS [STMicroelectronics], M58WR064 Datasheet - Page 16

• Manufacturer Part Number: M58WR064
• Description: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58WR064ET, M58WR064EB
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
Table 5. Standard Commands
Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
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Read Array
Read Status Register
Read Electronic Signature
Read CFI Query
Clear Status Register
Block Erase
Program
Program/Erase Suspend
Program/Erase Resume
Protection Register Program
Set Configuration Register
Block Lock
Block Unlock
Block Lock-Down
The second Bus Write cycle latches the block
address.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.
3. Any address within the bank can be used.
QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection
Register Data, CRD=Configuration Register Data.
Commands
1+
1+
1+
1+
1
2
2
1
1
2
2
2
2
2
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Op.
BKA or WA
BKA or BA
BKA or BA
BKA or BA
BKA or BA
1st Cycle
Add
BKA
BKA
BKA
CRD
BKA
BKA
PRA
X
X
power-down. Table. 13 shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section, Block Locking, for a detailed explana-
tion and Appendix C, Figure 27, Locking Opera-
tions Flowchart and Pseudo Code, for a flowchart
for using the Lock-Down command.
(3)
(3)
(3)
(3)
(3)
40h or 10h
Data
D0h
FFh
70h
90h
98h
50h
20h
B0h
C0h
60h
60h
60h
60h
Bus Operations
Read
Read
Read
Read
Write
Write
Write
Write
Write
Write
Write
Op.
2nd Cycle
BKA
BKA
BKA
CRD
PRA
Add
WA
WA
BA
BA
BA
BA
(2)
(2)
(2)
Data
SRD
ESD
PRD
D0h
D0h
03h
01h
2Fh
QD
RD
PD