E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 28

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

28F016XS FLASH MEMORY
5.4
V
3/5# = Pin Set High for 3.3V Operations
28
CC
I
I
I
I
I
I
I
I
I
V
V
V
V
V
Symbol
CCW
CCE
CCES
PPS
PPR
PPD
PPW
PPE
PPES
IL
IH
OL
OH
OH
= 3.3V ± 5%, T
1
2
DC Characteristics
V
Current
V
Current
V
V
Current
V
Down Current
V
Current
V
V
Suspend Current
Input Low Voltage
Input High Voltage
Output Low
Voltage
Output High
Voltage
Suspend Current
CC
CC
CC
PP
PP
PP
PP
PP
Parameter
Standby/Read
Deep Power-
Program
Erase Current
Erase
Block Erase
Erase
Program
A
= 0°C to +70°C
(Continued)
Notes
1,6
1,6
1,2
1,6
1,6
1
1
1
6
6
6
6
–0.3
–0.2
Min
V
2.0
2.4
CC
Typ
0.2
30
10
15
14
30
8
8
6
9
3
4
1
Max
+0.3
V
200
200
0.8
0.4
12
17
12
17
15
25
10
20
6
5
CC
10
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
Program in Progress
V
Program in Progress
V
Block Erase in Progress
V
Block Erase in Progress
CE
Block Erase Suspended
V
V
RP# = GND ± 0.2V
V
Program in Progress
Program in Progress
V
Block Erase in Progress
V
Block Erase in Progress
V
Block Erase Suspended
V
I
V
V
I
OL
I
OH
OH
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
CC
CC
CC
0
= 4 mA
= –100 µA
#, CE
= 12.0V ± 5%
= 5.0V ± 10%
= 12.0V ± 5%
= 5.0V ± 10%
> V
= 12.0V ± 5%
= 12.0V ± 5%
= 5.0V ± 10%
= V
= –2.0 mA
= V
= V
= V
Test Conditions
V
CC
CC
PPH1
CC
CC
CC
1
# = V
Min
Min
Min
or V
IH
PPH2