E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 4

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

28F016XS FLASH MEMORY
4
Number
-001
-002
-003
Original Version
Removed support of the following features:
Changed definition of “NC.” Removed “No internal connection to die” from description.
Added “xx” to Upper Byte of Command (Data) Definition in Sections 4.3 and 4.4.
Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins.
Increased I
Changed V
Corrected t
Corrected the graphical representation of t
Increased Typical “Byte/Word Program Times” (t
5.13): t
3.3V
Increased Typical “Block Program Times” (t
Changed “Time from Erase Suspend Command to WSM Ready” spec name to “Erase
Minor cosmetic changes throughout document.
Added 3/5# pin to Pinout Configuration (Figure 2), Product Overview (Section 1.1) and
Modified Block Diagram (Figure 1): Removed Address Counter; Added 3/5# pin
Added 3/5# pin to Test Conditions of I
Added 3/5# pin (Y) to Timing Nomenclature (Section 5.6)
Removed Note 7 of Section 5.7
Modified Device Configuration Code: Incorporated RY/BY# Configuration (Level Mode
Modified Power-Up and Reset Timings (Section 5.10) to include 3/5# pin: Removed t
Added SSOP pinout (Figure 2) and Mechanical Specifications
Corrected TSOP Mechanical Specification A1 from 0.50 mm to 0.050 mm (Section 6.0)
Minor cosmetic changes throughout document.
that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns
and a TTL rise/fall time of <10 ns.
t
t
t
Suspend Latency Time to Read;” Modified typical values and Added Min/Max values
at V
Lead Descriptions (Section 2.1)
support ONLY)
and t
WHRH1A
WHRH2
WHRH2
All page buffer operations (read, write, programming, Upload Device Information)
Command queuing
Software Sleep and Abort
Erase all Unlocked Blocks and Two-Byte Write
RY/BY# Configuration as part of the Device Configuration command
CC
WHRH1A
3VPH
=3.3/5.0V and V
from 2.2 sec to 3.8 sec and t
from 1.6 sec to 2.8 sec and t
PPR
CC
PHCH
from 11.0 µs to 20.0 µs and t
specifications; Added t
= 5.0V DC Characteristics (Section 5.5) marked with Note 1 to indicate
(V
from 16.5 µs to 29.0 µs and t
(RP# High to CLK) to be a “Min” specification at V
PP
Read Current) for V
REVISION HISTORY
PP
=5.0/12.0V (Section 5.13).
PLYL
CCS
Description
WHRH3
WHRH3
PP
, t
WHRH1B
Specifications
PLYH
WHCH
> V
WHRH2
WHRH1B
from 1.6 sec to 2.4 sec at V
from 1.2 sec to 1.7 sec at V
, t
CC
and t
YLPH
WHRH1A
from 16.0 µs to 25.0 µs at V
to 200 µA at V
/ t
WHRH3
from 24.0 µs to 35.0 µs at V
, and t
EHCH
/t
WHRH1B
) for V
in Figures 15 and 16.
YHPH
CC
PP
specifications
) for V
CC
= 3.3V/5.0V.
= 5.0V (Section 5.13):
= 3.3V/5.0V.
PP
= 5.0V (Sec.
CC
CC
CC
= 3.3V
= 5.0V.
= 5.0V.
CC
=
5VPH