E28F016XS20 INTEL [Intel Corporation], E28F016XS20 Datasheet - Page 45

• Manufacturer Part Number: E28F016XS20
• Description: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
• Manufacturer: INTEL [Intel Corporation]

5.9
V
CC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
AVAV
VPEH
PHWL
WLEL
AVEH
DVEH
ELEH
EHDX
EHAX
EHWH
EHEL
GHEL
EHRL
RHPL
PHEL
EHCH
QVVL
EHQV
EHQV
= 5.0V ± 5%, T
1,2
1,2
1
2
AC Characteristics for CE
Write Cycle Time
V
High
RP# Setup to WE# Going
Low
WE# Setup to CE
Low
Address Setup to CE
Going High
Data Setup to CE
High
CE
Data Hold from CE
Address Hold from CE
High
WE hold from CE
CE
Read Recovery before
Write
CE
Going Low
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
RP# High Recovery to
CE
Write Recovery before
Read
V
Register (CSR, GSR, BSR)
Data and RY/BY# High
Duration of Program
Operation
Duration of Block Erase
Operation
PP
PP
X
X
X
X
Setup to CE
# Pulse Width
# Pulse Width High
# High to RY/BY#
# Going Low
Hold from Valid Status
A
= 0°C to +70°C
Parameter
Versions
(until publication date)
INTEL CONFIDENTIAL
X
X
X
# Going
X
# High
# Going
# Going
X
# High
X
#
X
#
4/15/97 9:41 AM
X
3,4,5,8
#—Controlled Write Operations
Notes
2,6,7
2,6,7
3,7
3,7
2,7
2,7
3,7
3,7
3,7
3,4
3
7
7
3
3
3
Min
100
300
300
4.5
0.6
60
45
45
50
15
20
9053204.DOC
0
0
5
5
0
0
0
28F016XS-15
Typ
1.2
6
TBD
Max
100
20
28F016XS FLASH MEMORY
Min
100
300
300
4.5
0.6
60
45
45
50
15
20
0
0
5
5
0
0
0
28F016XS-20
(1) (Continued)
Typ
1.2
6
TBD
Max
100
20
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
45