STM8L151G4Y3 STMICROELECTRONICS [STMicroelectronics], STM8L151G4Y3 Datasheet - Page 84

• Manufacturer Part Number: STM8L151G4Y3
• Description: 8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical parameters
9.3.5
Table 35.
1. Data based on characterization results, not tested in production.
2. Retention guaranteed after cycling is 10 years @ 55 °C.
3. Retention guaranteed after cycling is 1 year @ 55 °C.
4. Data based on characterization performed on the whole data memory.
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Symbol
N
V
t
I
t
prog
prog
RET
RW
DD
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
Data retention (data memory) after 10000
erase/write cycles at T
Data retention (data memory) after 10000
erase/write cycles at T
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 34.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
=+85 °C
=+85 °C
=+85 °C
Parameter
Doc ID 15962 Rev 5
(1)
Halt mode (or Reset)
T
T
A
A
=+25 °C, V
=+25 °C, V
f
SYSCLK
Conditions
See notes
See notes
T
T
T
Conditions
RET
RET
RET
=+55 °C
=+55 °C
=+85 °C
= 16 MHz
DD
DD
(1)(2)
(1)(3)
= 3.0 V
= 1.8 V
Min
1.4
STM8L151xx, STM8L152xx
300
20
20
10
1.65
Min
1
(4)
(1)
(1)
(1)
(1)
(1)
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
ms
V
V